收藏本站
IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB Mount) a
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
40
3.5
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 60 V, V GS = 0 V
V DS = 48 V, V GS = 0 V, T J = 150 °C
60
-
2.0
-
-
-
-
0.063
-
-
-
-
-
-
4.0
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 6.0 A b
-
-
0.2
?
Forward Transconductance
g fs
V DS = 25 V, I D = 6.0
A b
2.4
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
300
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
160
29
-
-
-
11
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 10 A, V DS = 48 V,
see fig. 6 and 13 b
-
-
3.1
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
10
5.8
-
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
t r
t d(off)
t f
L S
V DD = 30 V, I D = 10 A,
R g = 24 ? , R D = 2.7 ? , see fig. 10 b
Between lead, and center of die contact
-
-
-
-
50
13
19
7.5
-
-
-
-
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
10
40
A
Body Diode Voltage
V SD
T J = 25 °C, I S = 10 A, V GS = 0
V b
-
-
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t rr
Q rr
T J = 25 °C, I F = 10 A, dI/dt = 100 A/μs b
-
-
70
200
140
400
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
www.vishay.com
2
Document Number: 90365
S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRFZ24NSTRR MOSFET N-CH 55V 17A D2PAK
IRFZ24STRRPBF MOSFET N-CH 60V 17A D2PAK
IRFZ34E MOSFET N-CH 60V 28A TO-220AB
IRFZ34NL MOSFET N-CH 55V 29A TO-262
IRFZ34STRLPBF MOSFET N-CH 60V 30A D2PAK
IRFZ44ESTRL MOSFET N-CH 60V 48A D2PAK
IRFZ44E MOSFET N-CH 60V 48A TO-220AB
IRFZ44NSTRR MOSFET N-CH 55V 49A D2PAK
相关代理商/技术参数
IRFZ15 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.3A I(D) | TO-220AB
IRFZ20 功能描述:MOSFET N-Chan 50V 17 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFZ20FI 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12.5A I(D) | TO-220AB
IRFZ20PBF 功能描述:MOSFET N-Chan 50V 17 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFZ22 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET TRANSISTORS
IRFZ22FI 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-220AB
IRFZ24 功能描述:MOSFET N-Chan 60V 17 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFZ24A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET